Chinese Scientists Unveil Record-Breaking Flash Memory Technology

Chinese researchers at Fudan University have developed “Poxiao,” the world’s fastest flash memory, capable of erasing and rewriting data in just 400 picoseconds. This breakthrough, 100,000 times faster than current flash storage, overcomes traditional speed limitations by employing a novel theory called “2D-enhanced hot-carrier injection.” Though in its prototype phase, Poxiao promises to merge memory and computing functions, revolutionizing AI and computing systems. Researchers plan to scale and commercialize the technology within five years, potentially reshaping the future of storage architecture.

In a groundbreaking leap for artificial intelligence (AI) and computing, researchers at Fudan University in China have unveiled a flash memory device with speeds previously thought unachievable. Nicknamed “Poxiao,” or Dawn, this innovation is capable of erasing and rewriting data in a staggering 400 picoseconds—equivalent to one-trillionth of a second.

Although the current prototype only stores a few kilobytes—barely sufficient to hold this article—it represents a monumental breakthrough in memory speed, surpassing conventional storage technology by a factor of 100,000. Published in the prestigious journal Nature, this advancement could redefine the relationship between memory and computing, paving the way for AI systems that process data as quickly as they think.

Addressing Long-Standing Challenges in AI and Computing

The journey to overcome the limitations of storage speed has been a central challenge in the field of integrated circuits. For AI systems, this bottleneck has constrained their ability to fully unleash their computational power. Current storage solutions often involve trade-offs: high-speed options like SRAM and DRAM are expensive, consume significant power, and lose data when powered off. Meanwhile, non-volatile storage solutions, such as flash memory, offer higher capacities and data persistence but lag far behind in speed.

The Fudan researchers set out to revolutionize flash memory, aiming to combine its strengths with the speed capabilities of volatile memory. Their efforts have culminated in a device that not only breaks theoretical speed barriers but also offers a glimpse into a future where memory and computing functions are seamlessly integrated.

Rethinking Flash Memory Design

Conventional flash memory operates using floating-gate transistors, where electrons are manipulated to record data. Historically, attempts to accelerate this process involved pre-energizing electrons to help them transition faster. However, this approach faced inherent speed limitations due to the “warm-up” phase required for electrons to gain energy.

“We realized that relying on traditional theories or incremental material adjustments would never lead to transformative progress,” explained project leader Liu Chunsen. To address this, the team developed an entirely new theoretical model, termed “2D-enhanced hot-carrier injection.” This approach eliminates the need for the warm-up phase, enabling electrons to transition directly from low to high speeds.

Using this innovative model, the researchers created a prototype device capable of achieving an erase-write speed of 400 picoseconds. This performance surpasses even the fastest volatile memory, SRAM, when measured at the same technology node. Compared to standard flash memory, which operates in hundreds of microseconds, the improvement is extraordinary—more than 100,000 times faster.

A Disruptive Force in Computing Architecture

According to Fudan University, Poxiao represents the world’s fastest semiconductor storage technology, offering storage and computation speeds at parity. This achievement has the potential to disrupt current computing architectures. “Once scaled up for mass integration, this technology could eliminate the distinction between memory and external storage, rendering hierarchical storage systems obsolete,” the university stated. Such advancements could also enable the deployment of large AI models directly on local devices, reducing reliance on cloud-based systems.

The implications extend beyond AI into everyday computing. Future personal computers may no longer need separate memory and storage components, simplifying design and improving efficiency.

Years of Research Culminate in a Breakthrough

The research team’s journey began in 2015, with early theoretical models proposed in 2021. By 2022, they had developed a flash memory device with an 8-nanometer channel length, surpassing the 15-nanometer size limit of silicon-based flash memory. The current Poxiao prototype has already been fabricated at the kilobyte scale using CMOS technology.

Looking ahead, the team aims to scale the technology to tens of megabytes within five years, with plans to license and commercialize it. If successful, this revolutionary technology could redefine the foundations of computing and usher in a new era of AI capabilities.

As the global race for technological dominance in AI continues, innovations like Poxiao highlight the transformative potential of scientific ingenuity, opening doors to a future that once seemed beyond reach.