Breakthrough in 2D Semiconductors: Chinese Researchers Unveil 1,000-fold Growth Speed

• Introduces a wafer-scale 2D semiconductor growth method that is about 1,000 times faster than previous techniques.

• Addresses the critical shortage of high-performance p-type 2D materials needed for advanced chips.

• Enables scalable integration of monolayer materials into sub-5nm CMOS circuits.

• Enhances transistor performance, thermal stability, and durability.

• Expands potential applications in AI chips, optoelectronics, sensors, and bioelectronics.

As global demand intensifies for faster and more energy-efficient chips—driven largely by artificial intelligence and large language models—scientists are racing to develop technologies that can push computing power beyond current limits. In this landscape, a team of Chinese researchers has announced a major advance in two-dimensional (2D) semiconductor fabrication that could help reshape the future of chip manufacturing.

For decades, the semiconductor industry has relied on Moore’s Law, the principle that chip performance would double approximately every two years. However, as transistors approach atomic-scale dimensions, further miniaturization has become increasingly constrained by physical and material limitations. This has prompted scientists to explore alternative materials capable of sustaining performance gains.

Among the most promising candidates are 2D semiconductors—materials just a single atomic layer thick. These materials offer new possibilities for continued transistor scaling, particularly at nodes smaller than 5 nanometers. Like traditional semiconductors, 2D materials can be engineered through a process known as doping, where trace elements are introduced to tailor their electrical properties. This produces either n-type (negative) or p-type (positive) materials, both of which are essential for building functional transistors.

While researchers have successfully developed several high-performing n-type 2D materials, including molybdenum disulphide and molybdenum diselenide, stable and efficient p-type counterparts have remained scarce. According to Zhu Mengjian of the National University of Defence Technology, the shortage of reliable p-type materials has become a significant obstacle in advancing ultra-small 2D semiconductor technologies, and resolving this challenge has become a focal point of international research efforts.

In response, a research team led by Zhu, along with Ren Wencai and Xu Chuan of the Institute of Metal Research at the Chinese Academy of Sciences (CAS), has introduced a new fabrication strategy. Their study, published online on March 26 in National Science Review, outlines a redesigned chemical vapour deposition (CVD) process that substantially enhances both speed and scalability.

The researchers replaced conventional solid substrates with a liquid gold and tungsten (Au/W) bilayer, enabling the wafer-scale production of monolayer tungsten silicon nitride films with adjustable doping properties. This innovation dramatically expands single-crystal domains to sub-millimetre sizes and accelerates growth rates to approximately 20 micrometres per minute—roughly 1,000 times faster than earlier methods, which could yield just 1 micrometre over five hours. The resulting films measure up to 3.6 centimetres by 1.8 centimetres.

Performance testing indicates that monolayer tungsten silicon nitride delivers strong hole mobility and high on-state current density—key characteristics for p-type semiconductor operation. In addition to electrical performance, the material demonstrates impressive mechanical durability, effective heat conduction, and notable resistance to chemical degradation.

The ability to grow large-area, precisely doped monolayer films is considered essential for integrating 2D materials into commercial CMOS (complementary metal-oxide-semiconductor) circuits. The research team noted that their approach not only supports scalable device integration but may also serve as a versatile framework for synthesizing other 2D materials more efficiently.

Beyond microprocessors, the material’s properties open doors to broader applications. Its stability and conductivity make it a promising candidate for optoelectronic devices such as LEDs, photodetectors, and lasers. Moreover, its chemical resilience positions it well for use in sensors operating in liquid environments and in bioelectronic interfaces.

As industries look beyond the limits of conventional silicon-based technologies, breakthroughs like this could accelerate the transition toward next-generation semiconductor platforms—helping sustain innovation in computing, communications, and intelligent systems for years to come.